note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0054c doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sft5333 a _ _ _ _ = not screened tx = tx level txv = txv level s = s level _ _ = to-5 sft5333a 2 amp, 100 volts high speed pnp transistor features: ? radiation tolerant ? fast switching, 150ns max t(on) ? high frequency, ft 85mhz min. ? bvceo 70 volts min. ? low saturation voltage ? 200oc operating temperature, gold eutectic die attach ? designed for complementary use with sft4300a ? tx, txv, s-level screening available 2 / - consult factory maximum ratings 3 / symbol value units collector ? emitter voltage v ceo 70 volts collector ? base voltage v cbo 100 volts emitter ? base voltage v ebo 6 volts collector current i c 2 amps base current i b 1 amps total device dissipation @ tc = 100oc derate above 100oc p d 15 150 w mw/oc operating & storage temperature top & tstg -65 to +200 oc maximum thermal resistance junction to case r jc 7 oc/w notes: * pulse test: pulse width = 300sec, duty cycle = 2% 1 / for ordering information, price, operating curves, and availability - contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / unless otherwise specified, all electrical characteristics @25oc. to-5
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0054c doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft5333a electrical characteristic 4 / symbol min max units collector ? emitter breakdown voltage* i c = 30ma bv ceo 70 ?? volts collector ? base breakdown voltage i c = 200a bv cbo 100 ?? volts emitter ? base breakdown voltage i e = 200a bv ebo 6 ?? volts collector ? cutoff current v cb = 90v, t c = 25oc v cb = 90v, t c = 100oc i cbo ?? 1 75 a collector ? cutoff current v ce = 40v i ceo ?? 5 a emitter ? cutoff current v eb = 6v i ebo ?? 1 a dc current gain * (v ce = 5v) i c = 1a i c = 2a h fe 40 40 250 ?? ?? collector ? emitter saturation voltage * i c = 1a, i b = 100ma i c = 2a, i b = 200ma v ce(sat) ?? ?? 0.45 1.0 volts base ? emitter v oltage * i c = 2a, v ce = 4v dc v be(on) ?? 1.5 volts current gain bandwidth product v ce = 10v, i c = 1a dc , f = 10mhz f t 85 ?? mhz output capacitance v cb = 30v, i e = 0a, f = 1mhz c ob ?? 75 pf input capacitance v be = 6v, i c = 0a, f = 1mhz c ib ?? 300 pf turn on time v cc = 20v, i c = 1a dc , v eb(off) = 3.7v, i b1 = i b2 = 100ma dc , r l = 20 ? t on ?? 150 nsec turn of f time t off ?? 450 nsec to-5 pin assignment package pin 1 pin 2 pin 3 (case) to-5 emitter base collector
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